dm n201 1 u fx advanced information s1 g1 s2 g2 d1/d2 d s1 g1 g ate protection diode d s2 g2 g ate protection diode dual n - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = + 25c 20v 9.5 m m? @ v description and applications this new generation mosfet is designed to minimize the on - state resistance (r ds(on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? general purpose interfacing switch ? power management functions features and benefits ? low on - resistance ? lo w input capacitance ? fast switching speed ? low input/output leakage ? esd protected ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3 ) mechanical data ? case: v - dfn2050 - 4 ? case material: molded plastic, ?gre en? molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish ? nipdau over copper leadframe. solderable per mil - std - 202, method 208 ? weight: 0.01 grams (approximate) ordering information (note 4 ) part number case packaging dm n2011 u fx - 7 v - dfn2050 - 4 30 00 / tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/qu ality/lead_free.html for more information about diodes incorporated?s definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diodes.com/products/packages.html. marking information date code key year 2014 2015 2016 201 7 201 8 201 9 20 20 code b c d e f g h month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d equivalent circuit t op view v - dfn2050 - 4 1 x = product type marking code ym = date code marking y = year (ex: b = 2014 ) m = month (ex: 9 = september) bottom view t op view pin - out esd protected ym 1x e4 dm n201 1 u fx document number: ds 37250 rev. 2 - 2 1 of 7 www.diodes.com august 2014 ? diodes incorporated
dm n201 1 u fx advanced information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 2 0 v gate - source voltage v gss 12 v continuous drain current (note 6 ) v gs = 4.5 v steady state t a = + 25c t a = + 70 c i d 12.2 9.8 a continuous drain current (note 6 ) v gs = 2.5 v steady state t a = + 25c t a = + 70 c i d 10.4 8.3 a pulsed drain curren t ( 10 s pulse, duty c ycle = 1% ) i dm 80 a maximum body diode continuous current i s 2.5 a avalanche current (note 7 ) l = 0. 1mh i a s 18 a repetitive avalanche energy (note 7 ) l = 0. 1mh e a s 17 mj thermal characteristics characteristic symbol max unit power dissipation ( note 6 ) p d 2.1 w thermal resistance, junction to ambient @t a = + 25c (note 6 ) r ja 59.1 c/w thermal resistance, junction to case (note 6 ) r j c 7.1 c/w operating and storage temperature range t j , t stg - 55 to +150 c electrical c haracteris tics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 20 ? v v gs = 0v, i d = 250 a zero gate voltage drain current t j = + 25c i dss 1 a v ds = 16 v, v gs = 0v gate - source leakage i gss 10 a v gs = 10 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) 0.3 1.0 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds(on) ? ? v gs = 4. 5 v, i d = 10 a ? ? ? ? ? ? dynamic characteristic s (note 9 ) input capacitance c iss ? ? ? ? ? 265 pf gate resistance r g 1.5 v ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g 24 nc v ds = 10 v, i d = 8.5 a total gate charge ( v gs = 1 0v ) q g ? ? ? ? ? ? ? ? v g s = 4.5 v, r g = 1.8 turn - on rise time t r ? ? ? ? ? ? ? 12.8 n s i f = 8.5a , di /d t = 21 0 a/ s body diode reverse recovery charge q rr 6.9 n c i f = 8.5a , di /d t = 21 0 a/ s notes: 5. device mounted on fr - 4 substra te pc board, 2oz copper, with minimum recommended pad layout. 6. device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 7. i as and e as rating are based on low frequency and duty cycles to keep t j = + 25c . 8 . short duration p ulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing. dm n201 1 u fx document number: ds 37250 rev. 2 - 2 2 of 7 www.diodes.com august 2014 ? diodes incorporated
dm n201 1 u fx advanced information v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v = 1.0v gs v = 1.2v gs v = 1.5v gs v = 4.0v gs v = 10v gs v = 3.0v gs v = 3.5v gs v = 2.0v gs v = 2.5v gs v = 4.5v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n -s o u r c e o n -r esi s t a n c e ( ) d s ( o n ) ? ? r , d r a i n - s o u r c e o n -r e si st an c e (n o r m al i z e d ) d s ( o n ) 0.4 0.8 1.2 1.6 2 -50 -25 0 25 50 75 100 125 150 v= v i = 5a gs d 2.5 v= v i = 3a gs d 1.8 t , junction temperature ( c) figure 6 on-resistance variation with temperature j r , d r a i n - so u r c e o n -r es i st an c e ( ) d s ( o n ) ? www.diodes.com august 2014 ? diodes incorporated
dm n201 1 u fx advanced information t , junction temperature ( c) figure 7 gate threshold variation vs. ambient temperature j v , g a t e t h r esh o l d vo l t ag e (v) g s ( t h ) 0 0.2 0.4 0.6 0.8 1 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , source-drain voltage (v) sd figure 8 diode forward voltage vs. current i , s o u r c e c u r r en t (a ) s 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a v , drain-source voltage (v) ds figure 9 typical drain-source leakage current vs. voltage i , d r a i n l e aka g e c u r r en t (n a) d s s 0.1 1 10 100 1000 10000 100000 0 2 4 6 8 10 12 14 16 18 20 t = 25c a t = 85c a t = 125c a t = 150c a v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c ap ac i t a n c e (p f ) t 100 1000 10000 0 2 4 6 8 10 12 14 16 18 20 c iss c oss c rss f = 1mhz q (nc) g , total gate charge figure 11 gate charge v g a t e t h r e sh o l d vo l t ag e (v) g s 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 v = 10v i= a ds d 8.5 v , drain-source voltage (v) figure 12 soa, safe operation area ds i , d r a i n c u r r en t (a ) d 0.01 0.1 1 10 100 0.01 0.1 1 10 100 t = 150c t = 25c v = 4.5v single pulse j(max) a gs dut on 1 * mrp board r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w dm n201 1 u fx document number: ds 37250 rev. 2 - 2 4 of 7 www.diodes.com august 2014 ? diodes incorporated
dm n201 1 u fx advanced information t1, pulse duration time (sec) figure 13 transient thermal resistance r ( t ) , t r a n s i e n t t h er m al r esi st an c e r (t) = r(t) * r r = 147c/w duty cycle, d = t1/ t2 ? ja ja ja d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 dm n201 1 u fx document number: ds 37250 rev. 2 - 2 5 of 7 www.diodes.com august 2014 ? diodes incorporated
dm n201 1 u fx advanced information y x1 c y1 x2 g x y2 x3 pa ckage outlin e dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version . suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. dimens ions value (in mm) c 0.500 g 0.150 x 0.350 x1 0.850 x2 1.540 x3 0.175 y 0.700 y1 3.600 y2 5.300 v - dfn20 50 - 4 dim min max typ a 0.75 0. 85 0.80 0 0.05 0.02 a 3 - - 0 .15 b 0. 20 0. 30 0. 25 b1 0. 70 0. 80 0. 75 d 1. 90 2.10 2.00 d 2 1 . 4 0 1. 6 0 1. 5 0 e 4.90 5.10 5.00 e2 3.46 3.66 3.56 e 0.50 bsc l 0.35 0.65 0.50 z - - 0.375 all dimensions in mm d d2 e e b l e2 a a1 a3 pin #1 id seating plane b1 z dm n201 1 u fx document number: ds 37250 rev. 2 - 2 6 of 7 www.diodes.com august 2014 ? diodes incorporated
dm n201 1 u fx advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, e nhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product descri bed herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any compo nent in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its rep resentatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2014, diodes incorporated www.diodes.com dm n201 1 u fx document number: ds 37250 rev. 2 - 2 7 of 7 www.diodes.com august 2014 ? diodes incorporated
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